View BGA736L16_5640359.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BGA736L16 tri-band hsdpa lna (2100, 1900/2100, 800/900 mhz) data sheet, v2.1, july 2008 rf & protection devices
edition 2008-07-03 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2009. all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the app lication of the device, infi neon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology , delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain da ngerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the hu man body, or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
data sheet 3 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna BGA736L16 revision history: 2008-07-03, v2.1 previous version: 2008-02-27, v2.0 page subjects (major cha nges since last revision) 5, 6 updated hbm esd protection 11 added rf characteristics for umts band viii 13 added rf characteristics for umts band iv 39 added application circuit schematic for umts bands i, iv and viii all updated values for high and mid gain currents
data sheet 4 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.3 esd integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.5 band select / gain control truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.6 supply current characteristics; t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.7 logic signal characteristics; t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.8 switching times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.9 measured rf characteristics low band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.9.1 measured rf characteristics umts band v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.9.2 measured rf characteristics umts band viii . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.10 measured rf characteristics mid band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.10.1 measured rf characteristics umts ba nd ii . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.10.2 measured rf characteristics umts ba nd iv . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.11 measured rf characteristics high band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.11.1 measured rf characteristics umts ba nd i . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.12 measured performance low band high gain mode vs. freq uency . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.13 measured performance low band high gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . 16 2.14 measured performance low band mid gain mode vs. freque ncy . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.15 measured performance low band mid gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . . 19 2.16 measured performance low band low gain mode vs. freq uency . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2.17 measured performance low band low gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . 21 2.18 measured performance mid band high gain mode vs. freq uency . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2.19 measured performance mid band high gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . 24 2.20 measured performance mid band mid gain mode vs. freque ncy . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 2.21 measured performance mid band mid gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . . 26 2.22 measured performance mid band low gain mode vs. freque ncy . . . . . . . . . . . . . . . . . . . . . . . . . . 27 2.23 measured performance mid band low gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . . 29 2.24 measured performance high band high gain mode vs. freq uency . . . . . . . . . . . . . . . . . . . . . . . . . 30 2.25 measured performance high band high gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . 31 2.26 measured performance high band mid gain mode vs. freq uency . . . . . . . . . . . . . . . . . . . . . . . . . . 32 2.27 measured performance high band mid gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . 34 2.28 measured performance high band low gain mode vs. freq uency . . . . . . . . . . . . . . . . . . . . . . . . . . 35 2.29 measured performance high band low gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . 36 3 application circuit and block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 3.1 umts bands i, ii and v application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 3.2 umts bands i, iv and viii application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 9 3.3 pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 3.4 application board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 4 physical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 4.1 package footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 4.2 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 table of contents
data sheet 5 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna description 1 description the BGA736L16 is a highly flexible, tri-gain mode, and tri-band (2100, 1900/2100, 800/900 mhz) mmic low noise amplifier for worldwide use. based on infineon?s proprieta ry and cost-effective sige :c technology, the BGA736L16 features dynamic gain contro l, temperature stabilizatio n, standby mode, and 2 kv esd protection on-chip and matching off chip. while two gain modes are common in w-cdma systems, a third gain mode has been introduced to reduce the lna gain just enough to pass adjacent channel te sts without compromising on hsdpa performance. the 1900 mhz path can be converted into a 2100 mhz path and vice versa by optimizing the input matching and using an additional external output matching network. this document specifies device performance for the band combinations - umts bands i / ii / v and umts bands i / iv / viii. figure 1 block diagram of triple-band lna features ? gain: 16 / 3 / -8 db in high / mid / low gain mode ? noise figure: 1.1 db in high gain mode ? supply current: 5.3 / 5.3 / 0.85 ma in high / mid / low gain modes ? standby mode curr ent consumption < 2 a ? outputs internally matched to 50 ? ? 2 kv hbm esd protection ? low external component count ? small leadless tslp-16-1 package (2.3 x 2.3 x 0.39 mm) ? pb-free (rohs compliant) package tslp-16-1 package type package marking chip BGA736L16 pg-tslp-16-1 bga736 t1540 %ldvlqj /rjlf &lufxlwu\ 9&& 9*6 5)2870 5)287+ 5)287/ 9(1 9(1 5),1/ 5),10 5),1+ qf qf 5)*1'+ 5)*1'0 9*6 55()
data sheet 6 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics absolute maximum ratings 2 electrical characteristics 2.1 absolute maximum ratings 2.2 thermal resistance 2.3 esd integrity table 1 absolute maximum ratings parameter symbol values unit note / test condition min. max. supply voltage v cc -0.3 3.6 v supply current i cc 10 ma pin voltage v pin -0.3 v cc +0.3 v all pins except rf input pins pin voltage rf input pins v rfin -0.3 0.9 v rf input power p rfin 4dbm junction temperature t j 150 c ambient temperature range t a -30 85 c storage temperature range t stg -65 150 c table 2 thermal resistance parameter symbol value unit note / test conditions thermal resistance junction to soldering point r thjs 110 k/w table 3 esd integrity parameter symbol value unit note / test conditions typ. esd hardness hbm 1) 1) according to jesd22-a114 v esd-hbm 2000 v all pins
BGA736L16 - tri-band hsdpa lna electrical characteristics dc characteristics data sheet 7 v2.1, 2008-07-03 2.4 dc characteristics 2.5 band select / gain control truth table table 4 dc characteristics, t a =25c parameter symbol values unit note / test condition min. typ. max. supply voltage v cc 2.7 2.8 3.0 v supply current high and mid gain mode -30c 25c 85c i cchg i ccmg 4.3 5.3 6.4 ma ma ma all bands supply current is proportional to absolute temperature supply current low gain mode i cclg 850 a all bands supply current standby mode i ccoff 0.1 2 a logic level high v hi 1.5 2.8 v ven1 and ven2 logic level low v low 0.0 0.5 v logic currents ven i enl 0.2 a ven1 and ven2 i enh 10.0 a logic currents vgs i gsl 0.1 avgs i gsh 5.0 a table 5 band select truth table, v cc = 2.8 v high band mid band low band standby mode ven1 h h l l ven2 h l h l table 6 gain control truth table, v cc = 2.8 v high gain mid gain low gain vgs1 h h l vgs2 l h l
data sheet 8 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics supply current characteristics; t a =25c 2.6 supply current characteristics; t a =25c supply current high / mid gain mode versus reference resistor r ref (see figure 2 on page 38 for reference resistor; low gain mode supply current is independent of reference resistor). supply current highband i cc =f ( r ref ) v cc =2.8v supply current midband i cc =f ( r ref ) v cc =2.8v supply current lowband i cc =f ( r ref ) v cc =2.8v 1 10 100 2 3 4 5 6 7 8 9 r ref [k ? ] icc [ma] 1 10 100 2 3 4 5 6 7 8 9 r ref [k ? ] icc [ma] 1 10 100 2 3 4 5 6 7 8 9 r ref [k ? ] icc [ma]
BGA736L16 - tri-band hsdpa lna electrical characteristics logic signal characteristics; t a =25 c data sheet 9 v2.1, 2008-07-03 2.7 logic signal characteristics; t a = 25 c current consumption of logic inputs ven1, ven2, vgs1, vgs2 2.8 switching times logic currents i en1,2 =f ( v en1,2 ) v cc =2.8v logic currents i gs1,2 =f ( v gs1,2 ) v cc =2.8v table 7 typical switching times; t a = -30 ... 85 c parameter symbol values unit note / test condition min. typ. max. settling time gainstep t gs 1 s switching from any gain mode to a different gain mode; all bands settling time bandselect t bs 1.6 s switching from any band to a different band; all gain modes 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 v en1,2 [v] i en1,2 [a] 0 0.5 1 1.5 2 2.5 3 0 2 4 6 v gs1,2 [v] i gs1,2 [a]
data sheet 10 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics measured rf characteristics low band 2.9 measured rf characteristics low band 2.9.1 measured rf characteristics umts band v table 8 typical characteristics 800 mhz band, t a =25c, v cc =2.8v, r ref =8.2k ? parameter symbol values unit note / test condition min. typ. max. pass band range 869 894 mhz current consumption i cchg 5.20 ma high gain mode i ccmg 5.20 ma mid gain mode i cclg 0.85 ma low gain mode gain s 21hg 15.5 db high gain mode s 21mg 3.0 db mid gain mode s 21lg -8.9 db low gain mode reverse isolation 1) 1) verified by random sampling; not 100% rf tested s 12hg -38 db high gain mode s 12mg -40 db mid gain mode s 12lg -9 db low gain mode noise figure nf hg 1.1 db high gain mode nf mg 2.4 db mid gain mode nf lg 9.0 db low gain mode input return loss 1) s 11hg -14 db 50 ?, high gain mode s 11mg -12 db 50 ?, mid gain mode s 11lg -10 db 50 ?, low gain mode output return loss 1) s 22hg -20 db 50 ? , high gain mode s 22mg -22 db 50 ?, mid gain mode s 22lg -18 db 50 ? , low gain mode stability factor 2) 2) not tested in production; guaranteed by device design k >3.1 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -11 dbm high gain mode ip 1dbmg -10 dbm mid gain mode ip 1dblg -12 dbm low gain mode inband iip3 1) f 1 - f 2 =1mhz p f1 = p f2 =-25dbm iip3 hg iip3 mg iip3 lg -5 -5 -3 dbm high gain mode mid gain mode low gain mode
BGA736L16 - tri-band hsdpa lna electrical characteristics measured rf characteristics low band data sheet 11 v2.1, 2008-07-03 2.9.2 measured rf characteristics umts band viii table 9 typical characteristics 900 mhz band, t a =25c, v cc =2.8v, r ref =8.2k ? parameter symbol values unit note / test condition min. typ. max. pass band range 925 960 mhz current consumption i cchg 5.20 ma high gain mode i ccmg 5.20 ma mid gain mode i cclg 0.85 ma low gain mode gain s 21hg 15.2 db high gain mode s 21mg 2.8 db mid gain mode s 21lg -8.8 db low gain mode reverse isolation 1) 1) verified by random sampling; not 100% rf tested s 12hg -37 db high gain mode s 12mg -39 db mid gain mode s 12lg -9 db low gain mode noise figure nf hg 1.2 db high gain mode nf mg 2.6 db mid gain mode nf lg 9.0 db low gain mode input return loss 1) s 11hg -14 db 50 ?, high gain mode s 11mg -12 db 50 ?, mid gain mode s 11lg -11 db 50 ?, low gain mode output return loss 1) s 22hg -20 db 50 ? , high gain mode s 22mg -19 db 50 ?, mid gain mode s 22lg -19 db 50 ? , low gain mode stability factor 2) 2) not tested in production; guaranteed by device design k >3.4 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -9 dbm high gain mode ip 1dbmg -5 dbm mid gain mode ip 1dblg -11 dbm low gain mode inband iip3 1) f 1 - f 2 =1mhz p f1 = p f2 =-25dbm iip3 hg iip3 mg iip3 lg -5 -5 -3 dbm high gain mode mid gain mode low gain mode
data sheet 12 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics measured rf characteristics mid band 2.10 measured rf characteristics mid band 2.10.1 measured rf characteristics umts band ii table 10 typical characteristics 1900 mhz band, t a =25c, v cc =2.8v, r ref =8.2k ? parameter symbol values unit note / test condition min. typ. max. pass band range 1930 1990 mhz current consumption i cchg 5.30 ma high gain mode i ccmg 5.30 ma mid gain mode i cclg 0.85 ma low gain mode gain s 21hg 16.1 db high gain mode s 21mg 2.7 db mid gain mode s 21lg -8.1 db low gain mode reverse isolation 1) 1) verified by random sampling; not 100% rf tested s 12hg -35 db high gain mode s 12mg -36 db mid gain mode s 12lg -8 db low gain mode noise figure nf hg 1.0 db high gain mode nf mg 2.3 db mid gain mode nf lg 7.8 db low gain mode input return loss 1) s 11hg -15 db 50 ?, high gain mode s 11mg -12 db 50 ?, mid gain mode s 11lg -11 db 50 ?, low gain mode output return loss 1) s 22hg -19 db 50 ? , high gain mode s 22mg -18 db 50 ?, mid gain mode s 22lg -18 db 50 ? , low gain mode stability factor 2) 2) not tested in production; guaranteed by device design k >2.6 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -13 dbm high gain mode ip 1dbmg -13 dbm mid gain mode ip 1dblg -7 dbm low gain mode inband iip3 1) f 1 - f 2 =1mhz p f1 = p f2 =-26dbm iip3 hg iip3 mg iip3 lg -5 -6 2 dbm high gain mode mid gain mode low gain mode
BGA736L16 - tri-band hsdpa lna electrical characteristics measured rf characteristics mid band data sheet 13 v2.1, 2008-07-03 2.10.2 measured rf characteristics umts band iv table 11 typical characteristics 2100 mhz band, t a =25c, v cc =2.8v, r ref =8.2k ? parameter symbol values unit note / test condition min. typ. max. pass band range 2110 2155 mhz current consumption i cchg 5.30 ma high gain mode i ccmg 5.30 ma mid gain mode i cclg 0.85 ma low gain mode gain s 21hg 15.3 db high gain mode s 21mg 2.3 db mid gain mode s 21lg -7.5 db low gain mode reverse isolation 1) 1) verified by random sampling; not 100% rf tested s 12hg -34 db high gain mode s 12mg -35 db mid gain mode s 12lg -8 db low gain mode noise figure nf hg 1.1 db high gain mode nf mg 2.7 db mid gain mode nf lg 7.5 db low gain mode input return loss 1) s 11hg -19 db 50 ?, high gain mode s 11mg -14 db 50 ?, mid gain mode s 11lg -12 db 50 ?, low gain mode output return loss 1) s 22hg -18 db 50 ? , high gain mode s 22mg -17 db 50 ?, mid gain mode s 22lg -15 db 50 ? , low gain mode stability factor 2) 2) not tested in production; guaranteed by device design k >2.6 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -12 dbm high gain mode ip 1dbmg -12 dbm mid gain mode ip 1dblg -6 dbm low gain mode inband iip3 1) f 1 - f 2 =1mhz p f1 = p f2 =-26dbm iip3 hg iip3 mg iip3 lg -5 -6 2 dbm high gain mode mid gain mode low gain mode
data sheet 14 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics measured rf characteristics high band 2.11 measured rf characteristics high band 2.11.1 measured rf characteristics umts band i table 12 typical characteristics 2100 mhz band, t a =25c, v cc =2.8v, r ref =8.2k ? parameter symbol values unit note / test condition min. typ. max. pass band range 2110 2170 mhz current consumption i cchg 5.30 ma high gain mode i ccmg 5.30 ma mid gain mode i cclg 0.85 ma low gain mode gain s 21hg 16.2 db high gain mode s 21mg 2.3 db mid gain mode s 21lg -8.0 db low gain mode reverse isolation 1) 1) verified by random sampling; not 100% rf tested s 12hg -35 db high gain mode s 12mg -36 db mid gain mode s 12lg -8 db low gain mode noise figure nf hg 1.0 db high gain mode nf mg 2.6 db mid gain mode nf lg 7.9 db low gain mode input return loss 1) s 11hg -13 db 50 ?, high gain mode s 11mg -12 db 50 ?, mid gain mode s 11lg -10 db 50 ?, low gain mode output return loss 1) s 22hg -19 db 50 ? , high gain mode s 22mg -24 db 50 ?, mid gain mode s 22lg -14 db 50 ? , low gain mode stability factor 2) 2) not tested in production; guaranteed by device design k >2.2 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -13 dbm high gain mode ip 1dbmg -13 dbm mid gain mode ip 1dblg -7 dbm low gain mode inband iip3 1) f 1 - f 2 =1mhz p f1 = p f2 =-27dbm iip3 hg iip3 mg iip3 lg -5 -5 2 dbm high gain mode mid gain mode low gain mode
BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance low band high gain mode vs. frequency data sheet 15 v2.1, 2008-07-03 2.12 measured performance low band high gain mode vs. frequency t a =25c, v cc =2.8v, v gs1 =2.8v, v gs2 =0v, v en1 =0v, v en2 =2.8v, r ref =8.2k ? power gain |s 21 |=f( f ) power gain wideband |s 21 |=f( f ) matching | s 11 |=f( f ), | s 22 |=f( f ) reverse isolation |s 12 |=f( f ) 0.86 0.87 0.88 0.89 0.9 14 14.5 15 15.5 16 16.5 17 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 10 20 frequency [ghz] power gain [db] 0.86 0.87 0.88 0.89 0.9 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] |s 12 | [db]
data sheet 16 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance low band high gain mode vs. temperature 2.13 measured performance low band high gain mode vs. temperature v cc =2.8v, v gs1 =2.8v, v gs2 =0v, v en1 =0v, v en2 =2.8v, r ref =8.2 k ? noise figure nf = f( f ) input compression p 1db =f( f ) power gain |s 21 |=f( t a ) supply current i cc =f( t a ) 0.86 0.87 0.88 0.89 0.9 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 frequency [ghz] nf [db] 0.86 0.87 0.88 0.89 0.9 ?15 ?14 ?13 ?12 ?11 ?10 frequency [ghz] p1db [dbm] ?40 ?20 0 20 40 60 80 100 14 14.5 15 15.5 16 16.5 17 17.5 18 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 4 4.5 5 5.5 6 6.5 7 t a [c] i cc [ma]
BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance low band mid gain mode vs. frequency data sheet 17 v2.1, 2008-07-03 2.14 measured performance low band mid gain mode vs. frequency t a =25c, v cc =2.8v, v gs1 =2.8v, v gs2 =2.8v, v en1 =0v, v en2 =2.8v, r ref =8.2 k ? noise figure nf =f( t a ) input compression p 1db =f( t a ) power gain |s 21 |=f( f ) power gain wideband |s 21 |=f( f ) ?40 ?20 0 20 40 60 80 100 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?15 ?13 ?11 ?9 ?7 ?5 t a [c] p1db [dbm] 0.86 0.87 0.88 0.89 0.9 1 1.5 2 2.5 3 3.5 4 frequency [ghz] power gain [db] ?30c 25c 85c ?30c 25c 85c ?30c 25c 85c 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 10 frequency [ghz] power gain [db]
data sheet 18 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance low band mid gain mode vs. frequency matching | s 11 |=f( f ), | s 22 |=f( f ) reverse isolation |s 12 |=f( f ) noise figure nf =f( f ) input compression p 1db =f( f ) 0.86 0.87 0.88 0.89 0.9 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] |s 12 | [db] 0.86 0.87 0.88 0.89 0.9 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 frequency [ghz] nf [db] 0.86 0.87 0.88 0.89 0.9 ?15 ?14 ?13 ?12 ?11 ?10 ?9 ?8 frequency [ghz] p1db [dbm]
BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance low band mid gain mode vs. temperature data sheet 19 v2.1, 2008-07-03 2.15 measured performance low band mid gain mode vs. temperature v cc =2.8v, v gs1 =2.8v, v gs2 =2.8v, v en1 =0v, v en2 =2.8v, r ref =8.2k ? power gain |s 21 |=f( t a ) supply current i cc =f( t a ) noise figure nf =f( t a ) input compression p 1db =f( t a ) ?40 ?20 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 4 4.5 5 5.5 6 6.5 7 t a [c] i cc [ma] ?40 ?20 0 20 40 60 80 100 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?17 ?15 ?13 ?11 ?9 ?7 ?5 t a [c] p1db [dbm]
data sheet 20 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance low band low gain mode vs. frequency 2.16 measured performance low band low gain mode vs. frequency t a =25c, v cc =2.8v, v gs1 =0v, v gs2 =0v, v en1 =0v, v en2 =2.8v, r ref = 8.2 k ? power gain |s 21 |=f( f ) power gain wideband |s 21 |=f( f ) matching | s 11 |=f( f ), | s 22 |=f( f ) reverse isolation |s 12 |=f( f ) 0.86 0.87 0.88 0.89 0.9 ?11 ?10.5 ?10 ?9.5 ?9 ?8.5 ?8 ?7.5 ?7 frequency [ghz] power gain [db] 85c ?30c, 25c 85c ?30c, 25c 85c ?30c, 25c 0 2 4 6 8 10 ?70 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] power gain [db] 0.86 0.87 0.88 0.89 0.9 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] |s 12 | [db]
BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance low band low gain mode vs. temperature data sheet 21 v2.1, 2008-07-03 2.17 measured performance low band low gain mode vs. temperature v cc =2.8v, v gs1 =0v, v gs2 =0v, v en1 =0v, v en2 =2.8v, r ref =8.2k ? noise figure nf =f( f ) input compression p 1db =f( f ) power gain |s 21 | = f ( t a ) supply current i cc = f ( t a ) 0.86 0.87 0.88 0.89 0.9 7 7.5 8 8.5 9 9.5 10 10.5 11 frequency [ghz] nf [db] 0.86 0.87 0.88 0.89 0.9 ?13 ?12 ?11 ?10 ?9 ?8 ?7 ?6 ?5 frequency [ghz] p1db [dbm] ?40 ?20 0 20 40 60 80 100 ?11 ?10.5 ?10 ?9.5 ?9 ?8.5 ?8 ?7.5 ?7 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 0.7 0.75 0.8 0.85 0.9 0.95 1 t a [c] i cc [ma]
data sheet 22 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance mid band high gain mode vs. frequency 2.18 measured performance mid band high gain mode vs. frequency t a =25c, v cc =2.8v, v gs1 =2.8v, v gs2 =0v, v en1 =2.8v, v en2 =0v, r ref = 8.2 k ? noise figure nf =f( t a ) input compression p 1db =f( t a ) power gain |s 21 |=f( f ) power gain wideband |s 21 |=f( f ) ?40 ?20 0 20 40 60 80 100 7 7.5 8 8.5 9 9.5 10 10.5 11 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?18 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 t a [c] p1db [dbm] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 14 14.5 15 15.5 16 16.5 17 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 10 20 frequency [ghz] power gain [db]
BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance mid band high gain mode vs. frequency data sheet 23 v2.1, 2008-07-03 matching | s 11 |=f( f ), | s 22 |=f( f ) reverse isolation |s 12 |=f( f ) noise figure nf =f( f ) input compression p 1db =f( f ) 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] |s 12 | [db] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 frequency [ghz] nf [db] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?15 ?14 ?13 ?12 ?11 ?10 frequency [ghz] p1db [dbm]
data sheet 24 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance mid band high gain mode vs. temperature 2.19 measured performance mid band hi gh gain mode vs. temperature v cc =2.8v, v gs1 =2.8v, v gs2 =0v, v en1 =2.8v, v en2 =0v, r ref =8.2k ? power gain |s 21 |=f( t a ) supply current i cc =f( t a ) noise figure nf =f( t a ) input compression p 1db =f( t a ) ?40 ?20 0 20 40 60 80 100 14 14.5 15 15.5 16 16.5 17 17.5 18 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 4 4.5 5 5.5 6 6.5 7 t a [c] i cc [ma] ?40 ?20 0 20 40 60 80 100 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?15 ?13 ?11 ?9 ?7 ?5 t a [c] p1db [dbm]
BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance mid band mid gain mode vs. frequency data sheet 25 v2.1, 2008-07-03 2.20 measured performance mid band mid gain mode vs. frequency t a =25c, v cc =2.8v, v gs1 =2.8v, v gs2 =2.8v, v en1 =2.8v, v en2 =0v, r ref =8.2k ? power gain |s 21 |=f( f ) power gain wideband |s 21 |=f( f ) matching | s 11 |=f( f ), | s 22 |=f( f ) reverse isolation |s 12 |=f( f ) 1.93 1.94 1.95 1.96 1.97 1.98 1.99 1 1.5 2 2.5 3 3.5 4 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 10 frequency [ghz] power gain [db] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] |s 12 | [db]
data sheet 26 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance mid band mid gain mode vs. temperature 2.21 measured performance mid band mid gain mode vs. temperature v cc =2.8v, v gs1 =2.8v, v gs2 =2.8v, v en1 =2.8v, v en2 =0v, r ref = 8.2 k ? noise figure nf =f( f ) input compression p 1db =f( f ) power gain |s 21 |=f( t a ) supply current i cc =f( t a ) 1.93 1.94 1.95 1.96 1.97 1.98 1.99 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 frequency [ghz] nf [db] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?15 ?14 ?13 ?12 ?11 ?10 ?9 ?8 frequency [ghz] p1db [dbm] ?40 ?20 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 4 4.5 5 5.5 6 6.5 7 t a [c] i cc [ma]
BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance mid band low gain mode vs. frequency data sheet 27 v2.1, 2008-07-03 2.22 measured performance mid band low gain mode vs. frequency t a =25c, v cc =2.8v, v gs1 =0v, v gs2 =0v, v en1 =2.8v, v en2 =0v, r ref =8.2k ? noise figure nf =f( t a ) input compression p 1db =f( t a ) power gain |s 21 |=f( f ) power gain wideband |s 21 |=f( f ) ?40 ?20 0 20 40 60 80 100 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?17 ?15 ?13 ?11 ?9 ?7 ?5 t a [c] p1db [dbm] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?10 ?9.5 ?9 ?8.5 ?8 ?7.5 ?7 ?6.5 ?6 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 10 ?70 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] power gain [db]
data sheet 28 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance mid band low gain mode vs. frequency matching | s 11 |=f( f ), | s 22 |=f( f ) reverse isolation |s 12 |=f( f ) noise figure nf =f( f ) input compression p 1db =f( f ) 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] |s 12 | [db] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 6 6.5 7 7.5 8 8.5 9 9.5 10 frequency [ghz] nf [db] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?13 ?12 ?11 ?10 ?9 ?8 ?7 ?6 ?5 frequency [ghz] p1db [dbm]
BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance mid band low gain mode vs. temperature data sheet 29 v2.1, 2008-07-03 2.23 measured performance mid band low gain mode vs. temperature v cc =2.8v, v gs1 =0v, v gs2 =0v, v en1 =2.8v, v en2 =0v, r ref =8.2k ? power gain |s 21 |=f( t a ) supply current i cc =f( t a ) noise figure nf =f( t a ) input compression p 1db =f( t a ) ?40 ?20 0 20 40 60 80 100 ?10 ?9.5 ?9 ?8.5 ?8 ?7.5 ?7 ?6.5 ?6 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 0.7 0.75 0.8 0.85 0.9 0.95 1 t a [c] i cc [ma] ?40 ?20 0 20 40 60 80 100 6 6.5 7 7.5 8 8.5 9 9.5 10 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?18 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 t a [c] p1db [dbm]
data sheet 30 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance high band high gain mode vs. frequency 2.24 measured performance high band high gain mode vs. frequency t a =25c, v cc =2.8v, v gs1 =2.8v, v gs2 =0v, v en1 =2.8v, v en2 =2.8v, r ref =8.2k ? power gain |s 21 |=f( f ) power gain wideband |s 21 |=f( f ) matching | s 11 |=f( f ), | s 22 |=f( f ) reverse isolation |s 12 |=f( f ) 2.11 2.12 2.13 2.14 2.15 2.16 2.17 14 14.5 15 15.5 16 16.5 17 frequency [ghz] power gain [db] ?30c 25c 85c ?30c 25c 85c ?30c 25c 85c 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 10 20 frequency [ghz] power gain [db] 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] |s 12 | [db]
BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance high band high gain mode vs. temperature data sheet 31 v2.1, 2008-07-03 2.25 measured performance high band high gain mode vs. temperature v cc =2.8v, v gs1 =2.8v, v gs2 =0v, v en1 =2.8v, v en2 =2.8v, r ref =8.2k ? noise figure nf =f( f ) input compression p 1db =f( f ) power gain |s 21 |=f( t a ) supply current i cc =f( t a ) 2.11 2.12 2.13 2.14 2.15 2.16 2.17 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 frequency [ghz] nf [db] 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?15 ?14 ?13 ?12 ?11 ?10 frequency [ghz] p1db [dbm] ?40 ?20 0 20 40 60 80 100 14 14.5 15 15.5 16 16.5 17 17.5 18 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 4 4.5 5 5.5 6 6.5 7 t a [c] i cc [ma]
data sheet 32 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance high band mid gain mode vs. frequency 2.26 measured performance high ba nd mid gain mode vs. frequency t a =25c, v cc =2.8v, v gs1 =2.8v, v gs2 =2.8v, v en1 =2.8v, v en2 =2.8v, r ref =8.2k ? noise figure nf =f( t a ) input compression p 1db =f( t a ) power gain |s 21 |=f( f ) power gain wideband |s 21 |=f( f ) ?40 ?20 0 20 40 60 80 100 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?15 ?13 ?11 ?9 ?7 ?5 t a [c] p1db [dbm] 2.11 2.12 2.13 2.14 2.15 2.16 2.17 1 1.5 2 2.5 3 3.5 4 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 10 frequency [ghz] power gain [db]
BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance high band mid gain mode vs. frequency data sheet 33 v2.1, 2008-07-03 matching | s 11 |=f( f ), | s 22 |=f( f ) reverse isolation |s 12 |=f( f ) noise figure nf =f( f ) input compression p 1db =f( f ) 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] |s 12 | [db] 2.11 2.12 2.13 2.14 2.15 2.16 2.17 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 frequency [ghz] nf [db] 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?15 ?14 ?13 ?12 ?11 ?10 ?9 ?8 frequency [ghz] p1db [dbm]
data sheet 34 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance high band mid gain mode vs. temperature 2.27 measured performance high band mid gain mode vs. temperature v cc =2.8v, v gs1 =2.8v, v gs2 =2.8v, v en1 =2.8v, v en2 =2.8v, r ref = 8.2 k ? power gain |s 21 |=f( t a ) supply current i cc =f( t a ) noise figure nf =f( t a ) input compression p 1db =f( t a ) ?40 ?20 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 4 4.5 5 5.5 6 6.5 7 t a [c] i cc [ma] ?40 ?20 0 20 40 60 80 100 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?17 ?15 ?13 ?11 ?9 ?7 ?5 t a [c] p1db [dbm]
BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance high band low gain mode vs. frequency data sheet 35 v2.1, 2008-07-03 2.28 measured performance high ba nd low gain mode vs. frequency t a =25c, v cc =2.8v, v gs1 =0v, v gs2 =0v, v en1 =2.8v, v en2 =2.8v, r ref =8.2k ? power gain |s 21 |=f( f ) power gain wideband |s 21 |=f( f ) matching | s 11 |=f( f ), | s 22 |=f( f ) reverse isolation |s 12 |=f( f ) 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?10 ?9.5 ?9 ?8.5 ?8 ?7.5 ?7 ?6.5 ?6 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 10 ?70 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] power gain [db] 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] |s 12 | [db]
data sheet 36 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance high band low gain mode vs. temperature 2.29 measured performance high band low gain mode vs. temperature v cc =2.8v, v gs1 =0v, v gs2 =0v, v en1 =2.8v, v en2 =2.8v, r ref =8.2k ? noise figure nf =f( f ) input compression p 1db =f( f ) power gain |s 21 |=f( t a ) supply current i cc =f( t a ) 2.11 2.12 2.13 2.14 2.15 2.16 2.17 6 6.5 7 7.5 8 8.5 9 9.5 10 frequency [ghz] nf [db] 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?13 ?12 ?11 ?10 ?9 ?8 ?7 ?6 ?5 frequency [ghz] p1db [dbm] ?40 ?20 0 20 40 60 80 100 ?10 ?9.5 ?9 ?8.5 ?8 ?7.5 ?7 ?6.5 ?6 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 0.7 0.75 0.8 0.85 0.9 0.95 1 t a [c] i cc [ma]
BGA736L16 - tri-band hsdpa lna electrical characteristics measured performance high band low gain mode vs. temperature data sheet 37 v2.1, 2008-07-03 noise figure nf =f( t a ) input compression p 1db =f( t a ) ?40 ?20 0 20 40 60 80 100 6 6.5 7 7.5 8 8.5 9 9.5 10 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?18 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 t a [c] p1db [dbm]
BGA736L16 - tri-band hsdpa lna application circuit and block diagram umts bands i, ii and v application circuit schematic data sheet 38 v2.1, 2008-07-03 3 application circuit and block diagram 3.1 umts bands i, ii and v a pplication circuit schematic figure 2 application circuit wi th chip outline (top view) note: package paddle (pin 0) has to be rf grounded. table 13 parts list part number part type manufacturer size comment l1...l3 chip inductor various 0402 wirewound, q 50 c1...c7 chip capacitor various 0402 r ref chip resistor various 0402 bga736 l16 _appl_ t_071210 .vsd l1 3.9 c5 3.0pf v cc = 2.8 v v gs = 0/2.8v rfout 1900 mhz rfin 800 mhz v en = 0/2.8v v en = 0 / 2.8 v 0 gnd c7 100nf 8 7 6 9 10 11 12 13 14 15 16 1 2 3 4 5 biasing & logic circuitry vcc vgs 1 rfoutm rfouth rfoutl ven1 ven 2 rfinl rfinm rfinh n/c n/c rfgndh rfgndm r ref 8.2 k ? rref vgs 2 v gs = 0 / 2.8 v c6 39pf l3 8.2nh rfin 2100 mhz rfin 1900 mhz c1 39 pf c2 8.2pf l1 4.7 nh c3 18 pf c4 22 pf l2 3.9 nh rfout 2100 mhz rfout 800 mhz
data sheet 39 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna application circuit and block diagram umts bands i, iv and viii a pplication circuit schematic 3.2 umts bands i, iv and viii application circuit schematic figure 3 application circuit wi th chip outline (top view) note: package paddle (pin 0) has to be rf grounded. table 14 parts list part number part type manufacturer size comment l1...l5 chip inductor various 0402 wirewound, q 50 c1...c7 chip capacitor various 0402 r ref chip resistor various 0402 bga736 l16_ appl_bands _iv_viii.vsd c1 18pf l1 3. n h v cc = 2.8 v v gs = 0 / 2.8 v rfin 2100 mhz v en = 0/ 2.8v v en = 0 / 2.8 v 0 gnd 8 7 6 9 10 11 12 13 14 15 16 1 2 3 4 5 biasing & logic circuitry vcc vgs1 rfoutm rfouth rfoutl ven1 ven2 rfinl rfinm rfinh n/c n/c rfgndh rfgndm rref vgs 2 v gs = 0 / 2.8 v c2 6.8 pf l1 3.4nh rfin 2100 mhz c3 18 pf c4 22 pf l2 3.9 nh rfout 2100 mhz rfout 900 mhz l5 3.9nh rfout 2100 mhz l4 2.9nh c5 3 .0pf rfin 900 mhz c6 39 pf l3 7 .3nh c7 100nf r ref 8.2 k ?
BGA736L16 - tri-band hsdpa lna application circuit and block diagram pin definition data sheet 40 v2.1, 2008-07-03 3.3 pin definition table 15 pin definition and function pin number symbol function 0 gnd ground connection for low band (800/900 mhz) lna and control circuity (package paddle) 1 vgs2 gain step control 2 vgs1 gain step control 3 vcc supply voltage 4 rfgndh high band (2100 mhz) lna rf ground 5 n/c not connected 6 rfinm mid band (1900/2100 mhz) lna input 7 rfinh high band (2100 mhz) lna input 8 rfgndm mid band (1900/2100 mhz) lna rf ground 9 n/c not connected 10 rfinl low band (800/900 mhz) lna input 11 ven2 band select control 12 ven1 band select control 13 rref bias current reference resistor (high / mid gain mode) 14 rfoutl low band (800/900 mhz) lna output 15 rfouth high band (2100 mhz) lna output 16 rfoutm mid band (1900/2100 mhz) lna output
data sheet 41 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna application circuit and block diagram application board 3.4 application board figure 4 application board layout on 3-layer fr4. top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 35 m cu metallization, gold pl ated. board size: 20 x 50 mm figure 5 cross-section view of application board %*$/b$ssb%rdugyvg 7rs/d\huwrsylhz %rwwrp/d\huwrsylhz 0lggoh/d\huwrsylhz %*$/b&urvvb6hfwlrqb9lhzyvg pp&rsshu pp3uhsuhj)5 pp3uhsuhj)5 pp&rsshu pp)5 pp3uhsuhj)5 pp3uhsuhj)5 pp&rsshu
BGA736L16 - tri-band hsdpa lna application circuit and block diagram application board data sheet 42 v2.1, 2008-07-03 figure 6 detail of application board layout note: in order to achieve the same performance as given in this datasheet please follow the suggested pcb-layout as closely as possible. the position of th e gnd vias is critical for rf performance. %*$/b$ssb%rdugbh[dfwyvg 5),1+ *1' 5),10 5)*1'0 5)287+ 5)2870 5)287/ (1 5),1/ *6 *6 9&& 5 ) * 1' + 55() (1
data sheet 43 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna physical characteristics package footprint 4 physical characteristics 4.1 package footprint figure 7 recommended footprint and stencil layout fo r the tslp-16-1 package. smd - v2 footprint is used on ifx application board stencil apertures copper solder mask nsmd smd - v1 smd - v2 (e.g. bga734l16) 0.225 0.225 0.275 0.075 2.3 2.3 1.25 1.25 0.55 0.3 0.2 0.3 0.2 0.3 0.2 0.3 0.3 0.2 0.225 0.35 0.55 2.3 0.3 0.2 0.3 0.2 0.3 0.2 0.3 0.3 0.2 0.3 0.2 0.3 0.2 0.3 0.2 0.3 0.3 0.2 1.25 0.15 0.225 0.35 0.55 2.3 0.3 0.2 0.3 0.2 0.3 0.2 0.3 0.3 0.2 1.25 0.15 copper solder mask vias top to first inner layer tslp-16-1-fp v01
BGA736L16 - tri-band hsdpa lna physical characteristics package dimensions data sheet 44 v2.1, 2008-07-03 4.2 package dimensions figure 8 package outline (top, side and bottom view) top view bottom view pin 1 marking 0.05 max. 0.39 +0.01 -0.03 16x0.2 0.035 1 16 0.05 1 0.05 2 0.05x45? 0.035 16x0.2 1.4 0.035 0.05 2.3 0.035 1.4 1 0.05 0.05 2 0.05 2.3 1) 1) dimension applies to plated terminals tslp-16-1-po v02 2 3 4 5 15 14 13 911 10 12 8 7 6
published by infineon technologies ag www.infineon.com

▲Up To Search▲

Price & Availability of BGA736L16

	To Download BGA736L16 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .